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GaAs MMIC
Data Sheet Multiband Power Amplifier [800 ... 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL * Single Voltage Supply * Operating voltage range: 2 V to 6 V * POUT = 25.5 dBm at VD = 2.4 V * POUT = 26.0 dBm at VD = 3.0 V * POUT = 29.0 dBm at VD = 5.0 V * Overall power added efficiency up to 50% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! * *
CGY 196
SCT-598
Type CGY 196
Marking D6s
Ordering Code (taped) Q62702-G0080
Package SCT-598
Maximum Ratings Parameter Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (TS 80 C) TS: Temperature at soldering point Pulse peak power Symbol Value 6 1.0 20 150 - 55 ... + 150 1.0 2.0 Unit V A dBm
VD ID PIN_max TCh Tstg Ptot PPulse
C C
W W
Data Sheet
1
2001-01-01
GaAs Components
CGY 196 Thermal Resistance Parameter Channel-soldering point Symbol Value 70 Unit K/W
RthChS
VD1
VD2
RF IN / VG
RF OUT / VD3
GND
GND
GND
EHT08746
Figure 1
Functional Block Diagram
Pin Configuration Pin No. 1 2 3 4 5 6 7 8 Symbol RF IN/VG GND Configuration RF input power + Gate voltage [0 V internal] RF and DC ground Pos. drain voltage of the 2nd stage Not connected Not connected
VD2
N.C. N.C.
RF OUT/VD3 RF output power/Pos. drain voltage of the 3rd stage GND RF and DC ground Pos. drain voltage of the 1st stage
VD1
Data Sheet
2
2001-01-01
GaAs Components
CGY 196 DC Characteristics Characteristics Symbol Limit Values min. Drain current stage 1 - 3 typ. 45 65 340 90 130 220 max. 75 110 515 130 170 300 mA mA mA mS mS mS Unit Test Conditions
IDSS1 IDSS2 IDSS3 GFS1 GFS2 GFS3
30 45 230 50 80 150
VD1 = 3 V VD2 = 3 V VD3 = 3 V VD = 3 V, ID = 50 mA VD = 3 V, ID = 300 mA VD = 3 V, ID = 300 mA
Transconductance stage 1 - 3
Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. When RthSA is already known: TS = PDiss x RthSA + TA
*
Data Sheet
3
2001-01-01
GaAs Components
CGY 196 Permissible Total Power Dissipation in DC Operation
1600 mW
EHT08747
Ptot DC
1200 1000 800 600 400 200 0
0
50
100
C 150
TS
b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable:
Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC)
Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value.
Data Sheet
4
2001-01-01
GaAs Components
CGY 196 Pulse Factor
10 1
EHT08748
Ptot max Ptot DC
5
tp
D= T
tp
T D=
0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 0 -6 10
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 2 W
c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature.
TCh =
Channel temperature (= junction temperature)
(PDiss/Pulse Factor x
RthChS) +
TS
Temperature of soldering point, measured or calculated
Power dissipated in the Rth of device from chip, divided by the channel to soldering applicable pulse factor point (= 1 for DC and CW). It does not contain decoupled RF-power
Data Sheet
5
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Supply current Supply current Gain Output Power Overall Power added Efficiency Overall Power added Efficiency Supply current Supply current Gain Output Power Overall Power added Efficiency Overall Power added Efficiency Off Isolation Load mismatch Limit Values typ. 300 450 30 26.0 45 50 450 330 32 28 40 45 40 max. 500 700 33 27.0 - - - 600 - 30 - - - mA mA dB dBm % % mA mA dB dBm % % dB - Unit Test Conditions
IDD IDD G PO
PAE PAE
- - 27 24.0 35 - - - - 26.5 30 - -
VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = 3 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = 0 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = 3 dBm VD = 4.8 V; PIN = 3 dBm VD = 4.8 V; PIN = 5 dBm VD = 0 V; PIN = 0 dBm PIN = 0 dBm, VD 3.6 V, ZS = 50
Load VSWR = 20:1 for all phase
IDD IDD G PO
PAE PAE -S21 -
No module damage for 10 s
Data Sheet
6
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Load mismatch - Limit Values typ. max. - Unit Test Conditions
No module damage for 10 s
PIN = 3 dBm, VD 5.0 V, ZS = 50
Load VSWR = 20:1 for all phase
Stability
-
All spurious output more - than 70 dB below desired signal level.
PIN = 0 dBm, VD 3.6 V, ZS = 50
Load VSWR = 10:1 for all phase
Stability
-
All spurious output more - than 70 dB below desired signal level.
PIN = 3 dBm, VD 5.0 V, ZS = 50
Load VSWR = 10:1 for all phase
Data Sheet
7
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (3.0 V DECTApplication, f = 1.89 GHz) Output Power and Power Added Efficiency, VD = 3.3 V, duty cycle 10%
27 dBm POUT 26 25 24 23 22 21 20 19 18 PAE
EHT08749
Output Power and Power Added Efficiency, VD = 5.0 V, duty cycle 10%
30 dBm POUT 29 28 27 26 25 24 23 22 21 PAE
EHT08750
POUT
60 % 55 PAE 50 45 40 35 30 25 20 15
POUT
60 % 55 PAE 50 45 40 35 30 25 20 15
17 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10
20 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10
PIN
PIN
pulsed mode: T = 417 s, duty cycle 12.5%
Data Sheet
8
2001-01-01
GaAs Components
CGY 196
Microwave Harmonica (tm) v5.0 COMPACT SOFTWARE 30.0 20.0 10.0 10.0 0.0 -10.0
CGY 196 Vd = 3.3 V
Jun-09-98 16:37:43 Ckt neu Y2 dB(S11) Ckt neu Y2 dB(S22) Ckt neu Y2 dB(S21) Ckt neu Y1 dB(S12)
-10.0 -20.0 -30.0 -40.0 -50.0
Y1 dB(S12)
0.0
-20.0 -30.0 -40.0 -50.0 -60.0 -70.0 0.0 0.5 1.0 1.5 FREQ [GHZ] 2.0 2.5 3.0
Y2
EHT08751
Figure 2
S-Parameter, pulsed mode: T = 417 s, Duty Cycle 12.5%, PIN = 0 dBm, VD = 3.3 V
Data Sheet
9
2001-01-01
GaAs Components
CGY 196
POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s,
duty cycle 12.5%)
400 mA
EHT08752
POUT vs. T, VD = 3.0 V, duty cycle = 10%, PIN = 0 dBm
40 dBm 30
I
350
POUT
POUT
29 dBm
EHT08755
POUT
300 250 20 10
VD = 4.8 V
28
I
200 150 100 50 0 0 -10
27
VD = 3 V
-20 -30 -40
26
0
1
2
3
4
V5
25 -40 -20
0
20
40
60
C 100
VD
T
Harmonic Distortion, VD = 3.3 V
-30 dBc -35
Distortion
EHT08753
Harmonic Distortion, VD = 4.8 V
-30 dBc -35
Distortion
EHT08754
-40 3f -45 -50 -55 -60 -65 -70 -10 2f
-40 -45 3f -50 2f -55 -60 -65 -70 -10
-8
-6
-4
-2
0
2 dBm 5
-8
-6
-4
-2
0
2 dBm 5
PIN
PIN
Data Sheet
10
2001-01-01
GaAs Components
CGY 196
IN
CGY 196
C1 C3 R1
D1
V 1.1
C6
C2
N.C. N.C.
C4
D3
C3
C5
D2
OUT
C1 = C2 = C3 = 100 nF
C4 = 3.3 pF
C5 = C6 = 680 pF
R 1 = 2.7
EHT08756
Figure 3
Test Board Layout (3.0 V DECT-Application, f = 1.89 GHz)
Data Sheet
11
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Supply current Supply current Output Power Overall Power added Efficiency Supply current Supply current Output Power Overall Power added Efficiency Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Load mismatch Limit Values typ. 340 450 25.5 44 320 450 24.7 42 380 450 27.0 44 35 max. - - - - - - - - - - - - - mA mA dBm % mA mA dBm % mA mA dBm % dB Unit Test Conditions
IDD IDD PO
PAE
- - - - - - - - - - - - -
VD = 2.4 V; PIN = + 0 dBm VD = 2.4 V; PIN = - 10 dBm VD = 2.4 V; PIN = 0 dBm VD = 2.4 V; PIN = + 0 dBm VD = 2.2 V; PIN = + 0 dBm VD = 2.2 V; PIN = - 10 dBm VD = 2.2 V; PIN = 0 dBm VD = 2.2 V; PIN = + 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 0 V; PIN = 0 dBm PIN = 0 dBm, VD 3.0 V, ZS = 50
Load VSWR = 20:1 for all phase
IDD IDD PO
PAE
IDD IDD PO
PAE -S21 -
No module damage for - 10 s
Data Sheet
12
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Load mismatch - Limit Values typ. max. Unit Test Conditions
No module damage for - 10 s
PIN = 3 dBm, VD 5.0 V, ZS = 50
Load VSWR = 20:1 for all phase
Stability
-
All spurious output - more than 70 dB below desired signal level. All spurious output - more than 70 dB below desired signal level.
PIN = 0 dBm, VD = 3.0 V, ZS = 50
Load VSWR = 10:1 for all phase
Stability
-
PIN = 3 dBm, VD = 5.0 V, ZS = 50
Load VSWR = 10:1 for all phase
POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%),
2.4 V Application
450 mA I 400 350 300 250 200 150 100 50 0 0 1 2 3 4 V5
EHT08757
40 dBm P 30 OUT 20 10 0 -10 -20 -30 -40 -50
POUT I
VD
Data Sheet
13
2001-01-01
GaAs Components
CGY 196
IN
CGY 196
C1 C3 R1
D1
V 1.1
C6
C2 C4
N.C. N.C. D3
C5
C3
OUT
D2
C1 = C2 = C3 = 100 nF
C4 = 3.3 pF
C5 = C6 = 680 pF
R 1 = 2.7
EHT08758
Figure 4
Test Board Layout (2.4 V DECT-Application, f = 1.89 GHz)
Data Sheet
14
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Load mismatch typ. 300 450 26.0 40 34 300 450 27.5 40 34 max. - - - - - - - - - - mA mA dBm % dB mA mA dBm % dB - Unit Test Conditions
IDD IDD PO
PAE -S21
- - - - - - - - - -
VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = - 10 dBm VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = + 3 dBm VD = 0 V; PIN = 3 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = + 6 dBm VD = 0 V; PIN = 3 dBm PIN = 3 dBm, VD 3.6 V, ZS = 50
Load VSWR = 20:1 for all phase
IDD IDD PO
PAE -S21 -
No module damage for 10 s
Load mismatch
-
No module damage for 10 s
-
PIN = 6 dBm, VD 5.0 V, ZS = 50
Load VSWR = 20:1 for all phase
Data Sheet
15
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) (cont'd) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Stability - typ. max. - Unit Test Conditions
All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level
PIN = 3 dBm, VD = 3.6 V, ZS = 50
Load VSWR = 10:1 for all phase
Stability
-
-
PIN = 6 dBm, VD = 5.0 V, ZS = 50
Load VSWR = 10:1 for all phase
Electrical Characteristics (2.4 GHz ISM-Application)
POUT, PAE = f (PIN), VD = 3.3 V, f = 2.4 GHz (pulsed mode: T = 417 s,
duty cycle 12.5%
50 dBm, % POUT , PAE 40 PAE 30
EHT08759
POUT
20
10
0 -10
-5
0
5 dBm 10
PIN
Data Sheet
16
2001-01-01
GaAs Components
CGY 196
03/09/99
Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\Spar.ckt
11:15:08
Y1 mess dB(S11(ckt=mess))
30.00 25.00 20.00 15.00 10.00
35.00 30.00 25.00 20.00 15.00 mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess))
Y1
5.00 0.00 -5.00 -10.00 -15.00 -20.00
Y2
10.00 5.00 0.00 -5.00 -10.00 -15.00 0.10 0.40 0.70 1.00 1.30 1.60 1.90 FREQ [GHz] 2.20 2.50 2.80 3.10
EHT08760
Figure 5
S-Parameter VD = 3.3 V, PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%)
Data Sheet
17
2001-01-01
GaAs Components
CGY 196
IN
CGY 196
C1 C3 R1
D1
V 1.1
C6
L1 C2
N.C. N.C.
C4 C3
D3
C5
D2
OUT
C1 = C2 = C3 = 100 nF
C4 = 1.8 pF
C5 = C6 = 1 nF
R 1 = 2.7
L1 = 3.9 nH
EHT08761
Figure 6
Test Board Layout (2.4 GHz ISM - Application)
Data Sheet
18
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (900 MHz ISM-Application) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Supply current Supply current Output Power Overall Power added Efficiency Off Isolation typ. 300 450 26.0 40 34 300 450 27.5 40 34 max. - - - - - - - - - - mA mA dBm % dB mA mA dBm % dB Unit Test Conditions
IDD IDD PO
PAE -S21
- - - - - - - - - -
VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = - 10 dBm VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = + 3 dBm VD = 0 V; PIN = 3 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = + 6 dBm VD = 0 V; PIN = 3 dBm
IDD IDD PO
PAE -S21
Data Sheet
19
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (900 MHz ISM-Application) (cont'd) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. max. - Unit Test Conditions
No module damage for 10 s
PIN = 3 dBm, VD 3.6 V, ZS = 50
Load VSWR = 20:1 for all phase
Load mismatch
-
No module damage for 10 s
-
PIN = 6 dBm, VD 5.0 V, ZS = 50
Load VSWR = 20:1 for all phase
Stability
-
All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level
-
PIN = 3 dBm, VD = 3.6 V, ZS = 50
Load VSWR = 10:1 for all phase
Stability
-
-
PIN = 6 dBm, VD = 5.0 V, ZS = 50
Load VSWR = 10:1 for all phase
Data Sheet
20
2001-01-01
GaAs Components
CGY 196 Electrical Characteristics (900 MHz ISM-Application)
POUT, PAE = f (PIN), VD = 3.5 V, f = 900 MHz [CW])
50 dBm, % POUT , PAE 40 35 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 dBm 5 PAE
EHT08762
POUT, PAE = f (VD), PIN = 0 dBm, f = 900 MHz [CW])
50 dBm, % POUT , PAE 40 35
EHT08763
PAE
POUT
30 25 20 15 10 5 0 2 2.4 2.8 3.2 3.6 V 4
POUT
PIN
Vd
Data Sheet
21
2001-01-01
GaAs Components
CGY 196
07/15/99
Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt
14:51:02
mess Y1 dB(S11(ckt=mess))
25.00 20.00 15.00 10.00 5.00
35.00 30.00 25.00 20.00 15.00 mess Y2 dB(S21(ckt=mess)) mess Y1 dB(S22(ckt=mess))
Y1
Y2
0.00 -5.00 -10.00 -15.00 -20.00 -25.00
10.00 5.00 0.00 -5.00 -10.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50
EHT08764
Figure 7
S-Parameter, VD = 3.5 V, PIN = - 5.5 dBm [cw mode]
07/15/99
Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt
15:33:21
mess Y1 dB(S11(ckt=mess))
25.00 20.00 15.00 10.00 5.00
35.00 30.00 25.00 20.00 15.00 mess Y2 dB(S21(ckt=mess)) mess Y1 dB(S22(ckt=mess))
Y1
0.00 -5.00 -10.00 -15.00 -20.00 -25.00
Y2
10.00 5.00 0.00 -5.00 -10.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50
EHT08765
Figure 8
Data Sheet
S-Parameter, VD = 3.5 V, PIN = - 0.5 dBm [cw mode]
22 2001-01-01
GaAs Components
CGY 196
IN
CGY 196
R2 C1 R1
D1
V 1.1
C6
C7
N.C. N.C. D3
C2
C4 C5 C3
D2
OUT
C1 = 47 pF C2 = 47 pF
C3 = 100 nF C4 = 5.6 pF
C5 = C6 = 680 pF C7 = 1 pF
R 1 = 2.7 R 2 = 10
EHT08766
Figure 9
Test Board Layout (900 MHz ISM - Application)
Data Sheet
23
2001-01-01
GaAs Components
CGY 196 Package Outlines SCT-598 (Special Package)
B
2.9 0.2 0.75 0.6
8 765
1.1 max. 0.15 +0.1 -0.06
2.6 max. 0.25 min.
10 max .
1
234
+0.1 0.2 -0.05
0.5 +0.1 -0.05 2.1 0.15
M
0.15
M
B 0.20
M
0.1 max. A
B
GPW09182
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Sheet 24
1.6 + 0.1
+0.2 acc.to DIN 6784
10 max.
A
Dimensions in mm 2001-01-01

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